发明名称 THIN FILM CAPACITOR
摘要 A thin film capacitor includes a lower electrode layer, a dielectric layer that is provided on said lower electrode layer, and an upper electrode layer that is formed on the dielectric layer. Wherein, the lower electrode layer contains at least a Ni electrode layer, the upper electrode layer configured with at least two layers of a Ni electrode layer and a Cu electrode layer, and the dielectric layer is in contact with both the Ni electrode layer of the lower electrode layer and the Ni electrode layer of the upper electrode layer.
申请公布号 US2013342960(A1) 申请公布日期 2013.12.26
申请号 US201313923585 申请日期 2013.06.21
申请人 TKD CORPORATION 发明人 SAITA HITOSHI;YANO YOSHIHIKO;OIKAWA YASUNOBU
分类号 H01G4/008;H01G4/01 主分类号 H01G4/008
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