发明名称 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a high-quality semiconductor light-emitting element and a method of manufacturing the same.SOLUTION: There is provided a semiconductor light-emitting element including a first electrode, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, an insulating layer, and a second electrode. The first electrode includes a first region, a second region, and a third region between the first region and the second region. The first semiconductor layer includes a first portion on the first region and a second portion on the second region, and has a first conductivity type. The light-emitting layer includes a third portion on the first portion and a fourth portion on the second portion. The second semiconductor layer includes a fifth portion on the third portion and sixth portion on the fourth portion, and has a second conductivity type. The insulating layer is provided between the first portion and the second portion and between the third portion and the fourth portion on the third region. The second electrode includes a seventh portion on the insulating film, an eighth portion in contact with a side surface of the fifth portion opposite to the sixth portion, and a ninth portion in contact with a side surface of the sixth portion opposite to the fifth portion.
申请公布号 JP2013258207(A) 申请公布日期 2013.12.26
申请号 JP20120132221 申请日期 2012.06.11
申请人 TOSHIBA CORP 发明人 TAJIMA JUNPEI;ZAIMA KOTARO;ONO HIROSHI;YAMADA SHINJI;KIMURA SHIGEYA;SUGIYAMA NAOJI;NUNOUE SHINYA
分类号 H01L33/38;H01L33/10;H01L33/24 主分类号 H01L33/38
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