ORIENTATION CONTROLLING METHOD FOR THIN FILM, AND METHOD FOR MANUFACTURING THIN FILM

摘要

PROBLEM TO BE SOLVED: To orient a crystal on an optional substrate to suppress growth of a surface with a high atom density (e.g., a crystal plane perpendicular to the c-axis of a hexagonal crystal) by using a simple means.SOLUTION: A conductive film 38 is formed in a part of the surface or the whole of the surface in a substrate 28. The substrate is arranged in a substrate holder 27 to face a target 22, and the conductive film 38 is connected to the ground. Sputtered particles sputtered out from the target 22 are deposited on the surface of the substrate 28 and grow to a thin film. Simultaneously, oxygen ions occurring from plasma in a vacuum chamber 21 are radiated to the thin film to inhibit growth of crystals oriented in a specific direction.