发明名称 SEMICONDUCTOR MEMORY DEVICE AND OPERATION METHOD FOR SAME
摘要 According to one embodiment, a control circuit is configured to perform a first read operation and a second read operation. The control circuit is configured to perform the plurality of first sense operations when applying a first reading voltage to the word line in the first read operation. The control circuit is configured to perform a second sense operation when applying a second reading voltage to the word line in the second read operation. The control circuit is configured to select one of informations read out by the plurality of sense operations based on data stored in adjacent memory cells.
申请公布号 US2013343124(A1) 申请公布日期 2013.12.26
申请号 US201313845509 申请日期 2013.03.18
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 MA SIBO;YOSHIHARA MASAHIRO
分类号 G11C16/34 主分类号 G11C16/34
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