| 摘要 |
Disclosed is a Cu-Ga sputtering target, wherein the ratio of the number of the atoms of gallium (Ga) to the total number of the atoms of gallium (Ga) and copper (Cu), i.e., (Ga/(Ga+Cu)), is 0.2-0.6, and an alkali metal is contained. With the Cu-Ga target, additional manufacture of a layer that blocks diffusion of Na from an Na-containing layer and an Na-containing substrate is not required at the time of manufacturing the CIGS solar cell, and the concentration of the alkali metal in the CIGS layer can be made relatively uniform. A method for manufacturing the target, a light absorbing layer manufactured using the target, and the CIGS solar cell using the light absorbing layer are also provided. |
