发明名称 |
PLASMA PROCESSING APPARATUS, PLASMA GENERATING APPARATUS, ANTENNA STRUCTURE, AND PLASMA GENERATING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of simplifying the structure of the apparatus and preventing the deterioration of the plasma generation efficiency.SOLUTION: A plasma processing apparatus 10 includes: a chamber 11; a placement base 12 disposed in the chamber 11 and on which a substrate S is placed; an ICP antenna 13 which is disposed at the exterior of the chamber 11 so as to face the placement base 12 and is connected with a high frequency power source 26; a window member 14 which forms a wall part of the chamber 11 facing the ICP antenna 13, is disposed between the placement base 12 and the ICP antenna 13, and is formed by a conductor; and a conducting wire 28 connected with the window member 14 at both ends. The window member 14 and the conducting wire 28 form a closed circuit, and the conducting wire 28 includes a capacitor 29. |
申请公布号 |
JP2013258098(A) |
申请公布日期 |
2013.12.26 |
申请号 |
JP20120134593 |
申请日期 |
2012.06.14 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
YAMAZAWA YOHEI;DENPO KAZUKI;KIMURA TAKAFUMI;KOSHIMIZU CHISHIO |
分类号 |
H05H1/46;C23C16/507;H01L21/205;H01L21/3065 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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