| 摘要 |
PROBLEM TO BE SOLVED: To solve such a problem that in a transistor, variation in a property such as a threshold and mobility is caused by piling of primary factors of variation of gate length, gate width, and film thickness of a gate insulation film caused by production process or the like; consequently, variation is caused in a current value supplied from a circuit by influence of variation of a property of a transistor.SOLUTION: A signal line is connected electrically to first to third circuits having transistors being adjacent to each other through a switching circuit, but it is not connected electrically to forth and fifth circuits being adjacent. By this constitution, such a semiconductor device can be provided that influence of a property of a transistor is suppressed and variation is not caused in current values. |
