| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a single crystal, superior in quality with regard to the homogeneity and having high material throughput in crystallization furnaces.SOLUTION: An arrangement 1 for manufacturing a crystal from a melt 16a of a raw material comprises: a furnace having heating devices 20a, 20b, 21 with one or more heating elements, which are configured to generate a gradient temperature field directed along a first direction; at least two crucibles 14 for receiving the melt 16a, which are arranged within the gradient temperature field side by side; and devices 21a, 21b for generating a magnetic field, as the devices for homogenizing the temperature field within a plane perpendicular to the first direction in the at least two crucibles 14, the devices being arranged to compensate an asymmetric structure of phase interfaces upon solidification of the melt 16a by interaction between a filling material inserted within a space between the crucibles 14 and the plurality of crucibles 14. |
