| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for further increasing the purity of polycrystalline silicon by using a starting gas having a low concentration of carbon-containing impurities.SOLUTION: First, trichlorosilane is prepared as a sample (S101), and then the carbon-containing impurity content thereof is analyzed by GC/MS-SIM method (S102). The quality thereof is determined based on the analysis results (S103), and, when determined to be nondefective (S103: Yes), the product is used as the starting material for producing high-purity polycrystalline silicon by CVD method (104). On the other hand, when determined to be defective (S103: No), the product is not used as the starting material for producing polycrystalline silicon. When impurity analysis by the GC/MS-SIM method is performed by using as the separation column a column obtained by in-series connection of a non-polar column and a neutral column, it is possible to simultaneously separate the chlorosilanes and the hydrocarbons and separate the chlorosilanes and the methylsilanes. |
