发明名称 |
Plural Differential Pair Employing FinFET Structure |
摘要 |
A plural differential pair may include a first semiconductor fin having first and second drain areas. First and second body areas may be disposed on the fin between the first and second drain areas. A source area may be disposed on the fin between the first and second body areas. The plural differential pair may include a first pair of fin field effect (FinFET) transistors and a second pair of FinFET transistors. The plural differential pair may include first and second top fin areas projecting from respective portions of a top side of the first and second body areas of the fin. The first and second top fin areas may each have a width that is wider than the first and second body areas of the fin. |
申请公布号 |
US2013341733(A1) |
申请公布日期 |
2013.12.26 |
申请号 |
US201213532422 |
申请日期 |
2012.06.25 |
申请人 |
ERICKSON KARL R.;PAONE PHIL C.;PAULSEN DAVID P.;SHEETS JOHN E.;UHLMANN GREGORY J.;WILLIAMS KELLY L.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ERICKSON KARL R.;PAONE PHIL C.;PAULSEN DAVID P.;SHEETS JOHN E.;UHLMANN GREGORY J.;WILLIAMS KELLY L. |
分类号 |
H01L27/088;H01L21/20 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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