发明名称 Plural Differential Pair Employing FinFET Structure
摘要 A plural differential pair may include a first semiconductor fin having first and second drain areas. First and second body areas may be disposed on the fin between the first and second drain areas. A source area may be disposed on the fin between the first and second body areas. The plural differential pair may include a first pair of fin field effect (FinFET) transistors and a second pair of FinFET transistors. The plural differential pair may include first and second top fin areas projecting from respective portions of a top side of the first and second body areas of the fin. The first and second top fin areas may each have a width that is wider than the first and second body areas of the fin.
申请公布号 US2013341733(A1) 申请公布日期 2013.12.26
申请号 US201213532422 申请日期 2012.06.25
申请人 ERICKSON KARL R.;PAONE PHIL C.;PAULSEN DAVID P.;SHEETS JOHN E.;UHLMANN GREGORY J.;WILLIAMS KELLY L.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ERICKSON KARL R.;PAONE PHIL C.;PAULSEN DAVID P.;SHEETS JOHN E.;UHLMANN GREGORY J.;WILLIAMS KELLY L.
分类号 H01L27/088;H01L21/20 主分类号 H01L27/088
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