| 摘要 |
PROBLEM TO BE SOLVED: To make possible to prevent electrical continuity between a plug and a select gate electrode from being established.SOLUTION: The method for manufacturing a semiconductor device comprises the process of forming a memory cell which includes: providing, by self alignment, a memory gate electrode MG of a side wall-shaped nMIS for memory on a side face of a select gate electrode CG of an nMIS for select with a dielectric film put therebetween; in a power-supply area of the memory cell, embedding a plug PM for supplying a voltage to the memory gate electrode MG in a contact hole CM formed in an interlayer dielectric film 9 formed on the memory gate electrode MG thereby to electrically connect the plug to the memory gate electrode MG; and forming a cap dielectric film CAP on a top face of the select gate electrode CG. |
