| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can inhibit variation in a resistance value between contact plugs and inhibit a short circuit between neighboring contact plugs.SOLUTION: A semiconductor device manufacturing method comprises: forming recesses in an interlayer insulation film located around a first surface corresponding to a formation region of contact holes; subsequently forming a mask for contact hole formation which is composed of polysilicon film and embedded in the interlayer insulation film by embedding the polysilicon film in the recess; subsequently forming contact holes which expose a principal surface of a semiconductor substrate on the interlayer insulation film by anisotropic etching through the mask for contact hole formation; and subsequently removing the conductive films arranged at least on upper parts than bottom faces of the recesses after embedding the conduct films in the contact holes to form contact plugs each composed of the conductive film in the contact holes. |
