| 摘要 |
PROBLEM TO BE SOLVED: To achieve bonding of a silicon substrate to a support medium without grinding of an outer periphery of the silicon substrate.SOLUTION: A semiconductor device manufacturing method according to the present embodiment comprises: a process of preparing a semiconductor substrate having a device layer on one surface side; an adhesion process of bonding the surface of the semiconductor substrate on the device layer side to one surface of a support medium; and a process of grinding, after the adhesion process, a surface of the silicon substrate on the side opposite to the one surface side. In particular, a depression processing is preliminarily performed before the adhesion process so as to make the surface of the bonding semiconductor substrate on the device layer side adhere tightly to the one surface of the support medium. |
