发明名称 |
SEMICONDUCTOR WAFER, FIELD-EFFECT TRANSISTOR, METHOD OF PRODUCING SEMICONDUCTOR WAFER, AND METHOD OF PRODUCING FIELD-EFFECT TRANSISTOR |
摘要 |
Provided is a semiconductor wafer including a base wafer, a first insulating layer, and a semiconductor layer. Here, the base wafer, the first insulating layer and the semiconductor layer are arranged in an order of the base wafer, the first insulating layer and the semiconductor layer, the first insulating layer is made of an amorphous metal oxide or an amorphous metal nitride, the semiconductor layer includes a first crystal layer and a second crystal layer, the first crystal layer and the second crystal layer are arranged in an order of the first crystal layer and the second crystal layer in such a manner that the first crystal layer is positioned closer to the base wafer, and the electron affinity Ea1 of the first crystal layer is larger than the electron affinity Ea2 of the second crystal layer. |
申请公布号 |
US2013341721(A1) |
申请公布日期 |
2013.12.26 |
申请号 |
US201314015775 |
申请日期 |
2013.08.30 |
申请人 |
SUMITOMO CHEMICAL COMPANY, LIMITED;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY;THE UNIVERSITY OF TOKYO |
发明人 |
AOKI TAKESHI;YAMADA HISASHI;FUKUHARA NOBORU;HATA MASAHIKO;YOKOYAMA MASAFUMI;KIM SANGHYEON;TAKENAKA MITSURU;TAKAGI SHINICHI;YASUDA TETSUJI |
分类号 |
H01L29/786;H01L21/762;H01L29/20;H01L29/66 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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