Integrated circuits with non-volatile memory and methods for manufacture

摘要

Semiconductor devices and the manufacture of such semiconductor devices are described. According to various aspects of the disclosure, a semiconductor device can include a memory region, a first logic region, and a second logic region. A select gate can be formed in the memory region of the device and a first logic gate formed in the logic region. A charge trapping dielectric can then be disposed and removed from a second logic region. A gate conductor layer can then be disposed on the device and etched to define a memory gate on the sidewall of the select gate and a second logic gate in the second logic region.

主权项

1. A method of manufacturing a semiconductor device that includes a first region, a second region, and a third region, comprising:
forming a select gate in the first region; forming a first logic gate in the second region; disposing a charge trapping dielectric in the first, second, and third regions; removing the charge trapping dielectric from the third region; disposing a gate conductor layer on the third region and over the charge trapping dielectric in the first and second regions; and etching the gate conductor layer to define a memory gate on a sidewall of the select gate and a second logic gate in the third region.