Self aligned contact formation

摘要

The present disclosure relates to methods of forming a self-aligned contact and related apparatus. In some embodiments, the method forms a plurality of gate lines interspersed between a plurality of dielectric lines, wherein the gate lines and the dielectric lines extend in a first direction over an active area. One or more of the plurality of gate lines are into a plurality of gate line sections aligned in the first direction. One or more of the plurality of dielectric lines are cut into a plurality of dielectric lines sections aligned in the first direction. A dummy isolation material is deposited between adjacent dielectric sections in the first direction and between adjacent gate line sections in the first direction. One or more self-aligned metal contacts are then formed by replacing a part of one or more of the plurality of dielectric lines over the active area with a contact metal.

主权项

1. An integrated chip, comprising:
a plurality of gate lines extending in a first row over one or more active areas; a first dummy isolation material disposed in the first row between adjacent ones of the plurality of gate lines; a plurality of self-aligned contacts disposed in a second row, which is parallel with and adjacent to the first row, at positions over the one or more active areas, wherein the plurality of self-aligned contacts are aligned with additional self aligned contacts in a second direction perpendicular to the second row; and a second dummy isolation material disposed in the second row between adjacent ones of the plurality of self-aligned contacts.