| 发明名称 | Crack control for substrate separation | ||
| 摘要 | A method for separating a layer for transfer includes forming a crack guiding layer on a substrate and forming a device layer on the crack-guiding layer. The crack guiding layer is weakened by exposing the crack-guiding layer to a gas which reduces adherence at interfaces adjacent to the crack guiding layer. A stress inducing layer is formed on the device layer to assist in initiating a crack through the crack guiding layer and/or the interfaces. The device layer is removed from the substrate by propagating the crack. | ||
| 申请公布号 | US9368407(B2) | 申请公布日期 | 2016.06.14 |
| 申请号 | US201514592421 | 申请日期 | 2015.01.08 |
| 申请人 | GlobalFoundries, Inc. | 发明人 | Bedell Stephen W.;Cheng Cheng-Wei;Sadana Devendra K.;Saenger Katherine L.;Shiu Kuen-Ting |
| 分类号 | H01L21/78;H01L21/306;H01L21/02 | 主分类号 | H01L21/78 |
| 代理机构 | Hoffman Warnick LLC | 代理人 | Cain David;Hoffman Warnick LLC |
| 主权项 | 1. A method for separating a layer for transfer, comprising: forming a crack guiding layer on a surface of a substrate; forming a device layer on the crack guiding layer; and weakening the crack guiding layer by exposing the crack-guiding layer to a gas which reduces adherence at interfaces adjacent to the crack guiding layer to remove the device layer from the substrate. | ||
| 地址 | Grand Cayman KY | ||