| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon-based thin film mass production apparatus which can be made compact, and in which in-plane film thickness distribution is less likely to occur.SOLUTION: In a silicon-based thin film mass production apparatus 10, each transparent electrode 62 is disposed to face each of a plurality of counter electrodes 16, with a gap, in parallel therewith. Plasma is generated by introducing the material gas of a silicon-based thin film into a chamber 12 and then applying a DC pulse voltage sequentially or all at once to the counter electrodes 16, thus producing a silicon-based thin film on each transparent electrode 62. Since a system for discharging by applying a DC pulse voltage is used, high frequency plasma density distribution does not occur when compared with a system for discharging by applying a high frequency intermittently, and in-plane film thickness distribution is less likely to occur. Furthermore, the ON interval can be shortened because the DC pulse voltage rises steeply, and since a sheath stops in a transient state before reaching the steady state and the thickness becomes thin, the distance between the counter electrode 16 and the transparent electrode 62 can be reduced, resulting in reduction in size of the apparatus. |
