| 摘要 |
Disclosed herein are CIGS-based photon-absorbing layers disposed on a substrate. The photon-absorbing layers are useful in photovoltaic devices. The photon absorbing-layer is made of a semiconductor material having empirical formula AB1-xB′xC2-yC′y, where A is Cu, Zn, Ag or Cd; B and B′ are independently Al, In or Ga; C and C′ are independently S, or Se, and wherein 0≦̸x≦̸1; and 0≦̸y≦̸2. The grain size of the semiconductor material and the composition of the semiconductor material both vary as a function of depth across the layer. The layers described herein exhibit improved photovoltaic properties, including increased shunt resistance and decreased backside charge carrier recombination. |
