IMAGE SENSOR PIXEL AND IMAGE SENSOR

摘要

An image sensor pixel includes a photosensitive element, a floating diffusion region, a transfer gate, a dielectric charge trapping region, and a first metal contact. The photosensitive element is disposed in a semiconductor layer to receive electromagnetic radiation along a vertical axis. The floating diffusion region is disposed in the semiconductor layer, while the transfer gate is disposed on the semiconductor layer to control a flow of charge produced in the photosensitive element to the floating diffusion region. The dielectric charge trapping device is disposed on the semiconductor layer to receive electromagnetic radiation along the vertical axis and to trap charges in response thereto. The dielectric charge trapping device is further configured to induce charge in the photosensitive element in response to the trapped charges. The first metal contact is coupled to the dielectric charge trapping device to provide a first bias voltage to the dielectric charge trapping device.