发明名称 |
MOS TRANSISTOR, FORMATION METHOD THEREOF, AND SRAM MEMORY CELL CIRCUIT |
摘要 |
Various embodiments provide an MOS transistor, a formation method thereof, and an SRAM memory cell circuit. An exemplary MOS transistor can include a semiconductor substrate including a first groove on one side of a gate structure and a second groove on the other side of the gate structure. The first groove can have a sidewall perpendicular to a surface of the semiconductor substrate. The second groove can have a sidewall protruding toward a channel region under the gate structure. A stressing material can be disposed in the first groove to form a drain region and in the second groove to form a source region. Stress generated in the channel region of the MOS transistor can be asymmetric. The MOS transistor can be used as a transfer transistor in an SRAM memory cell circuit to increase both read and write margins of the SRAM memory. |
申请公布号 |
US2013341726(A1) |
申请公布日期 |
2013.12.26 |
申请号 |
US201313739311 |
申请日期 |
2013.01.11 |
申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP.;SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP. |
发明人 |
GAN ZHENGHAO;FENG JUNHONG |
分类号 |
H01L27/092;H01L29/66 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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