发明名称 DEFECT OBSERVATION METHOD AND DEFECT OBSERVATION DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an observation method capable of observing a defect or the like occurred on a semiconductor wafer speedily with high detection ratio in the manufacturing process of a semiconductor device.SOLUTION: In a defect observation method and a defect observation device for detecting a defect from an image captured by an optical microscope 105 using position information of the defect on the sample detected by the other inspection device so that the position information of the defect is modified and the defect on the sample is observed in details by a scan type electron microscope 106 using the modified position information, the detecting of the defect from the image captured by the optical microscope 105 and the modifying of the position information of the defect are switched to a spatial distribution optical element of the detection optical system of the optical microscope 105 according to the defect to be detected, and an image acquisition condition under which the defect is captured by the optical microscope 105 according to the type of the switched spatial distribution optical system so as to acquire the image of the detect and an image processing condition for detecting the defect from the image acquired by the optical microscope 105 are changed.SELECTED DRAWING: Figure 1
申请公布号 JP2016109485(A) 申请公布日期 2016.06.20
申请号 JP20140245082 申请日期 2014.12.03
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 OTANI YUKO;TAKAGI YUJI;NAKAYAMA HIDEKI
分类号 G01N23/225;G01N21/956;H01L21/66 主分类号 G01N23/225
代理机构 代理人
主权项
地址