| 摘要 |
A method of fabricating a reduced surface field (RESURF) transistor includes forming a first well in a substrate, the first well having a first conductivity type, doping a RESURF region of the first well to have a second conductivity type, doping a portion of the first well to form a drain region of the RESURF transistor, the drain region having the first conductivity type, and forming a second well in the substrate, the second well having the second conductivity type. A plug region is formed in the substrate, the plug region extending to the RESURF region. |
