| 摘要 |
The present invention provides high field-effect mobility for a transistor using an oxide semiconductor. Also, the present invention provides a high-reliability semiconductor device using the transistor. A bottom gate-type transistor containing oxide semiconductor layers is configured to enable an oxide semiconductor layer, which functions as a rectification path (channel) of the transistor, to be inserted, and include an oxide semiconductor layer which has lower carrier density compared to the inserted oxide semiconductor layer. By using such a configuration, a buried channel is formed to separate a channel from an insulation layer interface which touches an oxide semiconductor layer stack. |
