发明名称 METHOD FOR FORMING SILICON-CONTAINING RESIST LOWER LAYER FILM
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a silicon-containing resist lower layer film, capable of reducing a coating defect after film formation by cleaning and removing deposits derived from a silicon-containing resist lower layer film material depositing and adhering in a pipe line of a coating and film formation device.SOLUTION: In a coating and film formation method of a silicon-containing resist lower layer film using spin coating, an alkaline aqueous solution is passed through a pipe line in a coating and film formation device using spin coating to clean the pipe line, and then a silicon-containing resist lower layer film material is supplied through the pipe line. Thus, the silicon-containing resist lower layer film is coated on a substrate to form a film.
申请公布号 JP2013258323(A) 申请公布日期 2013.12.26
申请号 JP20120133993 申请日期 2012.06.13
申请人 SHIN ETSU CHEM CO LTD 发明人 YOSHIHARA TAKAO;OGIWARA TSUTOMU;IWABUCHI MOTOAKI
分类号 H01L21/027;B05D1/40;B05D7/24;G03F7/11;G03F7/16 主分类号 H01L21/027
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