发明名称 |
Semiconductor Device with Selectively Etched Surface Passivation |
摘要 |
A semiconductor device includes a semiconductor substrate configured to include a channel, a gate supported by the semiconductor substrate to control current flow through the channel, a first dielectric layer supported by the semiconductor substrate and including an opening in which the gate is disposed, and a second dielectric layer disposed between the first dielectric layer and a surface of the semiconductor substrate in a first area over the channel. The second dielectric layer is patterned such that the first dielectric layer is disposed on the surface of the semiconductor substrate in a second area over the channel. |
申请公布号 |
US2013341678(A1) |
申请公布日期 |
2013.12.26 |
申请号 |
US201213533610 |
申请日期 |
2012.06.26 |
申请人 |
GREEN BRUCE M.;HILL DARRELL G.;HUANG JENN HWA;MOORE KAREN E.;FREESCALE SEMICONDUCTOR, INC. |
发明人 |
GREEN BRUCE M.;HILL DARRELL G.;HUANG JENN HWA;MOORE KAREN E. |
分类号 |
H01L29/812;H01L21/311;H01L29/778 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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