发明名称 Pinned Charge Transimpedance Amplifier
摘要 A system that has plural different photodetector circuits, each photodetector circuit including its own transfer gate, and each of the plural different photodetector circuits and transfer gates commonly connected to a first node. In amplifier is used which maintains a fixed voltage edits input. The amplifier Has a first capacitance to ground in a second capacitance as a feedback between its output and input. In one embodiment, there are 16 photodetector circuits connected to the single amplifier. In embodiments, the photodetector circuits can be located in one substrate while the amplifier is located in another substrate, and the amplifier also minimizes parasitics between the substrates.
申请公布号 US2013341490(A1) 申请公布日期 2013.12.26
申请号 US201313919913 申请日期 2013.06.17
申请人 MANSOORIAN BARMAK;TANTAWY RAMY;FORZA SILICON CORPORATION 发明人 MANSOORIAN BARMAK;TANTAWY RAMY
分类号 H01L27/146 主分类号 H01L27/146
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