发明名称 |
METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH FLUORINE PASSIVATION |
摘要 |
Methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a semiconductor substrate and forming a gate structure on the semiconductor substrate. The gate includes a high-k dielectric material. In the method, a fluorine-containing liquid is contacted with the high-k dielectric material and fluorine is incorporated into the high-k dielectric material. |
申请公布号 |
US2013344692(A1) |
申请公布日期 |
2013.12.26 |
申请号 |
US201213529327 |
申请日期 |
2012.06.21 |
申请人 |
TRIYOSO DINA;ERBEN ELKE;BINDER ROBERT;GLOBALFOUNDRIES INC. |
发明人 |
TRIYOSO DINA;ERBEN ELKE;BINDER ROBERT |
分类号 |
H01L21/283;H01L21/31 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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