| 摘要 |
A configuration is provided for a deposition device using the catalytic CVD method which reduces problems associated with extension of the catalyst and is superior in terms of running costs and productivity. The configuration provides a chamber 1 able to maintain reduced interior pressure; a source gas introducing route 32, 33a for introducing source gas into the chamber; a catalyst 4 of tantalum wire having a boride layer on the surface and provided inside the chamber 1 so as to allow the source gas introduced via the source gas introducing route to come into contact with the surface of the catalyst; a gas introducing route 36, 33b for introducing boron-containing gas to the chamber 1 for the reformation of the boride layer on the surface of the catalyst 4; and a power supply unit 5 for applying energy to the catalyst 4 to maintain the catalyst at a predetermined temperature. In this configuration, the introduction of the source gas is stopped, the catalyst 4 is heated while introducing diborane gas from the gas introducing route for reformation of the surface layer, and more boride is formed on the surface of the boride layer of the catalyst 4. |
