| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-efficiency semiconductor light-emitting element.SOLUTION: There is provided a semiconductor light-emitting element including a first electrode, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a third semiconductor layer, and a second electrode that are sequentially stacked. The first to third semiconductor layers and the light-emitting layer include a nitride semiconductor. The first semiconductor layer has a first conductivity type. The second semiconductor layer has a second conductivity type. The third semiconductor layer is provided on a part of the second semiconductor layer. The impurity concentration of the second conductivity type of the third semiconductor layer is lower than that of the second semiconductor layer. The second electrode includes a pad portion and a thin-line portion. The pad portion is provided on the third semiconductor layer. The thin-line portion extends from the pad portion, has a portion extending along a flat surface perpendicular to the stacking direction, and is in contact with the second semiconductor layer. |
