Method of manufacturing semiconductor device, method of processing substrate substrate processing apparatus and non-transitory computer-readable recording medium

摘要

An insulating film including characteristics such as low permittivity, a low etching rate and a high insulation property is formed. Supplying a gas containing an element, a carbon-containing gas and a nitrogen-containing gas to a heated substrate in a processing vessel to form a carbonitride layer including the element, and supplying the gas containing the element and an oxygen-containing gas to the heated substrate in the processing vessel to form an oxide layer including the element are alternately repeated to form on the substrate an oxycarbonitride film having the carbonitride layer and the oxide layer alternately stacked therein.

主权项

1. A method of manufacturing a semiconductor device, comprising:
(a) forming a carbonitride layer including an element by repeating a first set of steps a predetermined number of times, the first set including: supplying a gas containing the element to a substrate to form a first element-containing layer including the element; supplying a carbon-containing gas to the substrate to form a carbon-containing layer on the first element-containing layer to form a layer including the element and carbon; and supplying a nitrogen-containing gas to the substrate to nitride the layer including the element and carbon; (b) forming a partially oxidized layer including the element by repeating a second set of steps a predetermined number of times, the second set including: supplying the gas containing the element to the substrate to form a second element-containing layer including the element; and supplying an oxygen-containing gas to the substrate to partially oxidize the second element-containing layer without saturating an oxidation reaction of the second element-containing layer by the oxygen-containing gas; and (c) alternately repeating the steps (a) and (b) to form on the substrate an oxycarbonitride film having the carbonitride layer and the partially oxidized layer alternately stacked therein.