| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging device and a solid state imaging device driving method which can prevent electron residual in a storage region while preventing reduction in sensitivity.SOLUTION: A solid state imaging device 1 comprises: a first conductivity type substrate 11; a gate insulation film 12 formed on a top face of the substrate 11; a second conductivity type storage region 13 for storing electric charge generated by photoelectric conversion in the substrate 11; a second conductivity type reading region 15 which is a region in the substrate 11 and to which electric charge stored in the storage region 13 is transferred; and a transfer gate 16 formed on a top face of the gate insulation film 12 between the storage region 13 and the reading region 15. In at least a partial period during a transfer period, the solid state imaging device 1 becomes a first state where a potential bottom of a channel region 161 exceeds a potential bottom of the storage region 13 and further exceeds reset potential which is potential of the reading region 15 just before the transfer period. |
