| 摘要 |
Controlling a non-volatile memory. The non-volatile memory includes a plurality of memory cells in an integrated circuit substrate. The non-volatile memory also includes a high-voltage node in power-transmissive communication with the plurality of memory cells. Further, the non-volatile memory includes an intermediate-voltage node in power-transmissive communication with the plurality of memory cells. Moreover, the non-volatile memory includes a counter-doped-gate device, coupled within the integrated circuit substrate, in power-transmissive communication between the high-voltage node and the intermediate-voltage node. |
