发明名称 マスクパターン転写方法
摘要 PROBLEM TO BE SOLVED: To provide a mask pattern transfer method capable of improving exposure tolerance, in a transfer method of reducing and transferring a mask pattern included in a photomask on a wafer by liquid immersion exposure through a modified illumination using a pupil filter.SOLUTION: A binary-type photomask includes an intermediate layer with a refractive index of 0.2-3 and extinction coefficient of 0-3, and a thin layer configured with a transparent layer, on one principal surface of a transparent substrate, and a light-shielding film disposed on the thin layer forms a mask pattern. Using the binary-type photomask, the exposure light reflected at the mask pattern, of exposure light incident on the photomask, is re-reflected at the intermediate layer and intervened with the exposure light not reflected at the mask pattern, so that optical intensity of the exposure light emitted from the photomask is improved.
申请公布号 JP5949877(B2) 申请公布日期 2016.07.13
申请号 JP20140231890 申请日期 2014.11.14
申请人 大日本印刷株式会社 发明人 渡邊 浩司;早野 勝也;召田 敬;辻本 英二;小久保 晴夫;高見澤 秀吉
分类号 G03F1/50;G03F1/54 主分类号 G03F1/50
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