发明名称 Semiconductor device and method of manufacturing the same
摘要 A semiconductor device with improved reliability is provided. The semiconductor device is characterized by its embodiments in that sloped portions are formed on connection parts between a pad and a lead-out wiring portion, respectively. This feature suppresses crack formation in a coating area where a part of the pad is covered with a surface protective film.
申请公布号 US9391035(B2) 申请公布日期 2016.07.12
申请号 US201514685886 申请日期 2015.04.14
申请人 Renesas Electronics Corporation 发明人 Tomita Kazuo;Takewaka Hiroki
分类号 H01L23/48;H01L23/00;H01L21/66;H01L23/31 主分类号 H01L23/48
代理机构 Shapiro, Gabor and Rosenberger, PLLC 代理人 Shapiro, Gabor and Rosenberger, PLLC
主权项 1. A semiconductor device comprising a rectangular semiconductor chip, wherein the semiconductor chip includes: (a) a plurality of pads arranged along an edge side of the semiconductor chip; (b) a lead-out wiring portion provided on each of the plurality of pads; and (c) a sloped portion provided on a connecting part between each of the plurality of pads and the lead-out wiring portion, and wherein the lead-out wiring portion is connected to a side closest to the edge side of the semiconductor chip among a plurality of sides making up each of the plurality of pads.
地址 Tokyo JP