| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a gallium nitride Schottky-barrier diode containing a gallium nitride semiconductor film being capable of controlling an electron concentration by a donor concentration and having a high resistivity. <P>SOLUTION: In the Schottky barrier diode 41, a gallium nitride epitaxial layer 45 is formed on a group III nitride substrate 45 having a conductivity. A donor dopant element is added to the gallium nitride epitaxial layer 45. The gallium nitride epitaxial layer 45 has a carbon concentration less than 2&times;10<SP>16</SP>cm<SP>-3</SP>. The gallium nitride epitaxial layer 45 has a dislocation density less than 1&times;10<SP>8</SP>cm<SP>-2</SP>. The gallium nitride epitaxial layer 45 has an electron-carrier concentration less than 5&times;10<SP>16</SP>cm<SP>-3</SP>. The electron-carrier concentration can be changed by a donor dopant added to the gallium nitride epitaxial layer 45. <P>COPYRIGHT: (C)2007,JPO&amp;INPIT</p> |
