发明名称 |
METHODS OF FORMING SEMICONDUCTOR FILMS INCLUDING I2-II-IV-VI4 AND I2-(II,IV)-IV-VI4 SEMICONDUCTOR FILMS AND ELECTRONIC DEVICES INCLUDING THE SEMICONDUCTOR FILMS |
摘要 |
Embodiments of the present invention generally include methods for forming semiconductor films having nominal I2-II-IV-VI4 stoichiometry, such as CZTS or CZTSSe, using a solution of including sources of the I, II, IV, and VI elements in a liquid solvent. Precursors may be mixed in the solvent to form the solution. Metal halide salts may be used as precursors in some examples. The solution may be coated onto a substrate and annealed to yield the semiconductor film. In some examples, the source of the ‘I’ and ‘IV’ elements may contain the elements in a +2 oxidation state, while the semiconductor film may contain the ‘I’ element in a +1 oxidation state and the ‘IV’ element in a +4 oxidation state. Examples may be used to provide I2-(II,IV)-IV-VI4 films. |
申请公布号 |
EP2676300(A2) |
申请公布日期 |
2013.12.25 |
申请号 |
EP20120747692 |
申请日期 |
2012.02.17 |
申请人 |
UNIVERSITY OF WASHINGTON THROUGH ITS CENTER FOR COMMERCIALIZATION |
发明人 |
HILLHOUSE, HUGH;KI, WOOSEOK |
分类号 |
H01L31/06;H01L31/042;H01L31/18 |
主分类号 |
H01L31/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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