发明名称 |
Exposure apparatus, exposure method, and device manufacturing method |
摘要 |
An exposure apparatus includes a controller configured to control scanning of an original holding unit and a substrate holding unit to expose a first pattern forming area onto a plurality of second pattern forming areas formed in advance on the substrate. The first pattern forming area is superimposed on the plurality of second pattern forming areas. An original may include the first pattern forming area in plural. The controller is configured to change the operation of the original holding unit or the substrate holding unit among the plurality of second pattern forming areas based on a state of the second pattern forming areas or a state of the first pattern forming areas while the first pattern forming areas are scanning-exposed onto the plurality of second pattern forming areas in a single scanning between the original holding unit and the substrate holding unit. |
申请公布号 |
US9400434(B2) |
申请公布日期 |
2016.07.26 |
申请号 |
US201414494050 |
申请日期 |
2014.09.23 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
Takenaka Tsutomu;Mishima Kazuhiko |
分类号 |
G03B27/52;G03B27/42;G03F7/20 |
主分类号 |
G03B27/52 |
代理机构 |
Rossi, Kimms & McDowell LLP |
代理人 |
Rossi, Kimms & McDowell LLP |
主权项 |
1. An exposure apparatus that exposes a pattern formed on an original onto a substrate as a first pattern forming area, the exposure apparatus comprising:
an original holding unit configured to hold the original; a substrate holding unit configured to hold the substrate; and a controller configured to control scanning of the original holding unit and the substrate holding unit so as to expose a plurality of the first pattern forming areas onto a plurality of second pattern forming areas, formed in advance on the substrate, with the plurality of the first pattern forming areas superimposed on the plurality of second pattern forming areas, wherein the controller is configured to change an operation of the original holding unit for each of the plurality of second pattern forming areas based on a shape of the plurality of second pattern forming areas formed on the substrate or a shape of the pattern formed on the original, while the plurality of the first pattern forming areas are scanning-exposed onto the plurality of second pattern forming areas in a single scanning between the original holding unit and the substrate holding unit. |
地址 |
Tokyo JP |