Solar cell and method for manufacturing the same

摘要

A solar cell includes a semiconductor substrate having a first conductivity type, an emitter layer on a surface of the semiconductor substrate, the emitter layer having a second conductivity type different from the first conductivity type, and electrodes including a first electrode electrically connected to the emitter layer, and a second electrode electrically connected to the semiconductor substrate. The emitter layer includes a high-concentration doping portion adjacent to the first electrode, and a low-concentration doping portion in a region that does not include the high-concentration doping portion. The low-concentration doping portion has a higher resistance than the high-concentration doping portion. The high-concentration doping portion includes a first region having a first resistance, and a second region having a second resistance higher than the first resistance.

主权项

1. A solar cell comprising:
a semiconductor substrate having a first conductivity type; an emitter layer at or adjacent to a first surface of the semiconductor substrate, the emitter layer having a second conductivity type different from the first conductivity type; electrodes comprising a first electrode electrically connected to the emitter layer, and a second electrode electrically connected to the semiconductor substrate, wherein the emitter layer comprises a high-concentration doping portion adjacent to the first electrode, and a low-concentration doping portion in a region that does not include the high-concentration doping portion, the low-concentration doping portion having a higher sheet resistance than the high-concentration doping portion, wherein the high-concentration doping portion comprises a first region having a first sheet resistance, and a second region having a second sheet resistance higher than the first sheet resistance, wherein the first sheet resistance of the first region is 30 to 70 Ω/square (ohms/square), and the second sheet resistance of the second region is 80 to 90 Ω/square, wherein the sheet resistance of the low-concentration doping portion is uniform throughout the low-concentration doping portion and in the range of 100 to 120 Ω/square, wherein a ratio of a width of the second region to a width of the first region is 0.5 to 1.5, and wherein the low-concentration doping portion is wider than the high-concentration portion.