发明名称 Electrical contact
摘要 A photovoltaic device with a low-resistance stable electrical back contact is disclosed. The photovoltaic device can have a CuTex or CuTexNy layer.
申请公布号 US9412886(B2) 申请公布日期 2016.08.09
申请号 US201113214780 申请日期 2011.08.22
申请人 First Solar, Inc. 发明人 Addepalli Pratima V.;Jayaraman Sreenivas;Karpenko Oleh P.
分类号 H01L31/073;H01L31/0224;H01L31/0296;H01L31/0392;H01L31/048;H01L31/18 主分类号 H01L31/073
代理机构 Dickstein Shapiro LLP 代理人 Dickstein Shapiro LLP
主权项 1. A method for manufacturing a photovoltaic module comprising: forming a semiconductor absorber layer over a substrate, the semiconductor absorber layer comprising cadmium telluride; forming a low-resistance contact layer over the semiconductor absorber layer in which copper is bound in a chemically stable phase, the low-resistance contact layer comprising a copper telluride nitride with a formula of CuTexNy wherein x is in the range of 0.2 to 1 and y is less than 0.1; forming a diffusion barrier layer over the low-resistance contact layer; and forming a metal back contact layer over the diffusion barrier layer.
地址 Perrysburg OH US