发明名称 |
Electrical contact |
摘要 |
A photovoltaic device with a low-resistance stable electrical back contact is disclosed. The photovoltaic device can have a CuTex or CuTexNy layer. |
申请公布号 |
US9412886(B2) |
申请公布日期 |
2016.08.09 |
申请号 |
US201113214780 |
申请日期 |
2011.08.22 |
申请人 |
First Solar, Inc. |
发明人 |
Addepalli Pratima V.;Jayaraman Sreenivas;Karpenko Oleh P. |
分类号 |
H01L31/073;H01L31/0224;H01L31/0296;H01L31/0392;H01L31/048;H01L31/18 |
主分类号 |
H01L31/073 |
代理机构 |
Dickstein Shapiro LLP |
代理人 |
Dickstein Shapiro LLP |
主权项 |
1. A method for manufacturing a photovoltaic module comprising:
forming a semiconductor absorber layer over a substrate, the semiconductor absorber layer comprising cadmium telluride; forming a low-resistance contact layer over the semiconductor absorber layer in which copper is bound in a chemically stable phase, the low-resistance contact layer comprising a copper telluride nitride with a formula of CuTexNy wherein x is in the range of 0.2 to 1 and y is less than 0.1; forming a diffusion barrier layer over the low-resistance contact layer; and forming a metal back contact layer over the diffusion barrier layer. |
地址 |
Perrysburg OH US |