Semiconductor device and manufacturing method thereof

摘要

A semiconductor device having improved reliability is disclosed. In a semiconductor device according to one embodiment, an element isolation region extending in an X direction has a crossing region that crosses, in plan view, a memory gate electrode extending in a Y direction that intersects with the X direction at right angles. In this case, in the crossing region, a width in the Y direction of one edge side, the one edge side being near to a source region, is larger than a width in the Y direction of the other edge side, the other edge side being near to a control gate electrode.

主权项

1. A semiconductor device comprising:
an element isolation region that is formed in a semiconductor substrate and extends in a first direction; a control gate electrode that is formed over the semiconductor substrate and extends in a second direction that intersects with the first direction at right angles; a memory gate electrode that is formed over the semiconductor substrate and extends in the second direction so as to be parallel to the control gate electrode; and a source region that is formed in the semiconductor substrate and extends in the second direction so as to be parallel to the memory gate electrode, wherein the element isolation region includes: a crossing region that crosses the memory gate electrode in plan view; and a termination region that is in contact with the crossing region and the source region in plan view, and wherein in the crossing region, a first width in the second direction of a first edge side arranged near to the source region is larger than a second width in the second direction of a second edge side arranged near to the control gate electrode.