Semiconductor device and method for manufacturing the same

摘要

In an active matrix display device, electric characteristics of thin film transistors included in a circuit are important, and performance of the display device depends on the electric characteristics. Thus, by using an oxide semiconductor film including In, Ga, and Zn for an inverted staggered thin film transistor, variation in electric characteristics of the thin film transistor can be reduced. Three layers of a gate insulating film, an oxide semiconductor layer and a channel protective layer are successively formed by a sputtering method without being exposed to air. Further, in the oxide semiconductor layer, the thickness of a region overlapping with the channel protective film is larger than that of a region in contact with a conductive film.

主权项

1. A display device comprising:
a transistor comprising:
a gate electrode over a substrate;a first insulating layer comprising silicon nitride over the gate electrode;a second insulating layer comprising silicon oxide over the first insulating layer;an oxide semiconductor layer comprising a channel formation region overlapping the gate electrode with the first insulating layer and the second insulating layer therebetween;a third insulating layer comprising silicon oxide over the channel formation region; anda source electrode and a drain electrode over the third insulating layer; a fourth insulating layer comprising silicon oxide over the source electrode and the drain electrode; a fifth insulating layer comprising an organic material over the fourth insulating layer; and a light-emitting element comprising:
a first electrode over the fifth insulating layer;an electroluminescent layer over the first electrode; anda second electrode over the electroluminescent layer; anda protective film comprising silicon nitride over the light-emitting element, wherein the first electrode is electrically connected to one of the source electrode and the drain electrode of the transistor, and wherein the transistor has a single-gate structure.