Interconnect structure with improved conductive properties and associated systems and methods

摘要

Interconnect structures with improved conductive properties are disclosed herein. In one embodiment, an interconnect structure can include a first conductive member coupled to a first semiconductor die and a second conductive member coupled to second semiconductor die. The first conductive member includes a recessed surface defining a depression. The second conductive member extends at least partially into the depression of the first conductive member. A bond material within the depression can at least partially encapsulate the second conductive member and thereby bond the second conductive member to the first conductive member.

主权项

1. A semiconductor die assembly, comprising:
a first semiconductor die including a substrate, a dielectric material, and a conductive trace between the substrate and the dielectric material, wherein the dielectric material includes an opening, and wherein a portion of the conductive trace is exposed through the opening; a second semiconductor die; and a plurality of interconnect structures between the first and second semiconductor dies, wherein at least one of the interconnect structures includes:
a first conductive member projecting from the conductive trace and beyond the dielectric material, wherein the first conductive member includes a recessed surface defining a depression,a second conductive member coupled to the second semiconductor die, wherein at least a portion of the second conductive member extends into the depression of the first conductive member, anda bond material within the depression and contacting at least a portion of the second conductive member within the depression, wherein the bond material includes at least one of tin/silver (SnAg), a tin/nickel (SnNi) intermetallic, and a tin/copper (Sn/Cu) intermetallic.