Semiconductor device including substrate contact and related method

摘要

A method of forming a contact on a semiconductor device is disclosed. The method includes: forming a mask on the semiconductor device, the mask exposing at least one contact node disposed within a trench in a substrate of the semiconductor device; performing a first substrate contact etch on the semiconductor device, the first substrate contact etch recessing the exposed contact node within the trench;;removing a set of node films disposed above the exposed contact node and on the sides of the trench; and forming a contact region within the trench above the exposed contact node, the contact region contacting the substrate.

主权项

1. A method of forming a contact on a semiconductor device, the method comprising:
forming a mask on the semiconductor device, the mask exposing at least one contact region including a polysilicon node disposed in a trench of a substrate of the semiconductor device; performing a first substrate contact etch on the semiconductor device, the first substrate contact etch recessing the polysilicon node within the trench; removing a set of node films disposed about the polysilicon node and on the sides of the trench, wherein the set of node films include at least two films that extend below the polysilicon node, the polysilicon node being disposed entirely within the substrate and the set of node films; and forming a contact region within the trench to the substrate and completely covering a top surface of the polysilicon node.