| 发明名称 |
Method for processing a carrier |
| 摘要 |
A method for processing a carrier may include: forming a plurality of structure elements at least one of over and in a carrier, wherein at least two adjacent structure elements of the plurality of structure elements have a first distance between each other; depositing a first layer over the plurality of structure elements having a thickness which equals the first distance between the at least two adjacent structure elements; forming at least one additional layer over the first layer, wherein the at least one additional layer covers an exposed surface of the first layer; removing a portion of the at least one additional layer to expose the first layer partially; and partially removing the first layer, wherein at least one sidewall of the at least two adjacent structure elements is partially exposed. |
| 申请公布号 |
US9412601(B2) |
申请公布日期 |
2016.08.09 |
| 申请号 |
US201313833166 |
申请日期 |
2013.03.15 |
| 申请人 |
INFINEON TECHNOLOGIES DRESDEN GMBH |
发明人 |
Tegen Stefan;Lemke Marko |
| 分类号 |
H01L21/285;H01L21/8234;H01L21/8238;H01L21/308;H01L29/66;H01L21/84 |
主分类号 |
H01L21/285 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for processing a carrier, the method comprising:
forming a plurality of structure elements at least one of over and in the carrier, wherein at least two adjacent structure elements of the plurality of structure elements have a first distance between each other, and wherein at least two adjacent structure elements of the plurality of structure elements have a distance between each other which is larger than two times the first distance; depositing a first layer over the plurality of structure elements, the first layer having a thickness which equals the first distance between the at least two adjacent structure elements; forming at least one additional layer over the first layer, wherein the at least one additional layer covers an exposed surface of the first layer; removing a portion of the at least one additional layer to expose the first layer partially, wherein a remaining part of the at least one additional layer, which is disposed between the at least two adjacent structure elements of the plurality of structure elements having the distance between each other which is larger than two times the first distance, is spaced apart from these at least two adjacent structure elements with the first distance; and subsequently, partially removing the exposed first layer, wherein at least one sidewall of the plurality of structure elements is partially exposed. |
| 地址 |
Dresden DE |
