| 摘要 |
<p>The sensor has a set of pixels each comprising a charge collection region comprising an N-type region (208) that is bounded by P-type regions (202, 210), where the N-type region comprises an overlying P-type layer (218). An insulated gate electrode (216) is positioned over the P-type layer and arranged to receive gate voltage for conveying charges stored in the charge collection region through the P-type layer. One of the P-type regions is a heavily doped P-type region between the charge collection regions from an insulation trench (204). An independent claim is also included for a manufacturing process for an image sensor.</p> |
