发明名称 METHOD FOR FORMING INSULATING FILM
摘要 <p>[Problem] To provide a method capable of forming an insulating film having homogeneous and high bulk density and less suffering defects. [Means for solving] A substrate surface is coated with a silicon dioxide dispersion containing silicon dioxide fine particles, a polymer, a surfactant and a dispersion medium; and then further coated with a polysilazane composition; and thereafter heated to form an insulating film.</p>
申请公布号 EP2677535(A1) 申请公布日期 2013.12.25
申请号 EP20120746780 申请日期 2012.02.17
申请人 AZ ELECTRONIC MATERIALS IP (JAPAN) K.K. 发明人 TAKANO YUSUKE;NAGAHARA TATSURO;NINAD SHINDE;IWATA TAKAFUMI
分类号 H01L21/316;H01L21/76;H01L21/762;H01L21/768;H01L23/522;H01L23/532 主分类号 H01L21/316
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