发明名称 |
METHOD FOR FORMING INSULATING FILM |
摘要 |
<p>[Problem] To provide a method capable of forming an insulating film having homogeneous and high bulk density and less suffering defects. [Means for solving] A substrate surface is coated with a silicon dioxide dispersion containing silicon dioxide fine particles, a polymer, a surfactant and a dispersion medium; and then further coated with a polysilazane composition; and thereafter heated to form an insulating film.</p> |
申请公布号 |
EP2677535(A1) |
申请公布日期 |
2013.12.25 |
申请号 |
EP20120746780 |
申请日期 |
2012.02.17 |
申请人 |
AZ ELECTRONIC MATERIALS IP (JAPAN) K.K. |
发明人 |
TAKANO YUSUKE;NAGAHARA TATSURO;NINAD SHINDE;IWATA TAKAFUMI |
分类号 |
H01L21/316;H01L21/76;H01L21/762;H01L21/768;H01L23/522;H01L23/532 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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