Manufacturing method of integrated circuits based on formation of lines and trenches

摘要

The method involves exposing a first photosensitive layer to a beam of particles via a first mask to transfer first patterns. The patterns are formed in the photosensitive layer and transferred into a hard mask layer (HM) by etching the mask layer via the photosensitive layer. A second photosensitive layer is deposited on the mask layer and exposed to the beam via a second mask to transfer second patterns. The second patterns are formed in the second layer and transferred into the mask layer. The patterns are transferred into a target layer (TL) by etching the target layer via the mask layer. The first patterns form trenches (R1, R2) through lines (L1-L3) formed by the second patterns in the mask layer.