| 摘要 |
<p>The invention is related to a method for producing parallel conductive lines on the surface of a MEMS device. In the method of the invention, a first conductive line is produced, followed by the deposition and planarization of a dielectric layer (such as an oxide layer), the formation of a trench in said dielectric layer, the filling of said trench with a conductive material and the planarization of said material, to obtain a second conductive line formed by the filled trench. The production technique allows to produce lines at a mutual distance of less than 500nm and having a width of less than 500nm, without losing the control over the width definition of the lines.</p> |
