| 摘要 |
<p>The present invention provides a method for bonding a contact pad (9) of a power semiconductor (3), which is arranged on a substrate (1), to a metallization (7) of the substrate (1), comprising the steps of bonding at least one bonding means (11) of soft metal between the metallization (7) and the contact pad (9), and positioning the substrate (1) with the power semiconductor (3) and the at least one bonding means (11) of soft metal in a depositing bath for depositing a layer (13) of hard metal on the contact pad (9) and the at least one bonding means (11) of soft metal. The present invention also provides a substrate (1) with a power semiconductor mounted thereon, whereby the substrate (1) comprises metallization (7), the power semiconductor (3) has a contact pad (9), and at least one bonding means (11) of soft metal is bonded between the contact pad (9) and the metallization (7), whereby the at least one bonding means (11) of soft metal and the contact pad (9) have a layer (13) of hard metal deposited thereon.</p> |
